80V MOSFET on-resistance times increase efficiency
An 80 V TrenchFET Gen IV n-channel power MOSFET in the 6.15mm by 5.15mm PowerPAK SO-8 single package has been introduced by Vishay Intetechnology. Designed to save energy by increasing the efficiency of power conversion topologies and switching circuitry, the Vishay Siliconix SiR680ADP offers on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — of 129 mΩ*nC.
The device combines on-resistance down to 2.35mΩ typical at 10V with ultra-low gate charge of 55nC and COSS of 614pF.
These specifications are fine-tuned to reduce the power losses from switching, channel conduction, and diode conduction, resulting in increased efficiency.
The MOSFET's on-resistance times gate charge FOM is 12.2% lower than the closest competing product and 22.5% lower than the previous-generation device, making it the most efficient solution available for typical 48 V input to 12 V output DC/DC converters.
The SiR680ADP will serve as a building block in a wide variety of DC/DC and AC/DC conversion applications such as synchronous rectification, primary-side switching, buck-boost converters, resonant tank switching converters, and the OR-ing function in systems such as telecom and data center server power supplies; solar micro-inverters; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiR680ADP are available now, with lead times of 12 weeks.