80 V MOSFET reduces power losses from switching
TTI is now stocking Vishay’s SIR680ADP, a new 80 V TrenchFET Gen IV n-channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package.
It offers an on-resistance times gate charge — a key figure of merit (FOM) for MOSFET’s used in power conversion applications — of 129 mΩ*nC.
The MOSFET’s on-resistance times gate charge FOM is 12.2 % lower than the closest competing product and 22.5 % lower than the previous generation device, making it the most efficient solution available for typical 48 V input to 12 V output DC/DC converters.
The device’s specifications are fine-tuned to reduce the power losses from switching, channel conduction, and diode conduction, resulting in increased efficiency in selected applications, power saving could be as high as 1 W average across the load.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
