It offers an on-resistance times gate charge — a key figure of merit (FOM) for MOSFET’s used in power conversion applications — of 129 mΩ*nC.
The MOSFET’s on-resistance times gate charge FOM is 12.2 % lower than the closest competing product and 22.5 % lower than the previous generation device, making it the most efficient solution available for typical 48 V input to 12 V output DC/DC converters.
The device’s specifications are fine-tuned to reduce the power losses from switching, channel conduction, and diode conduction, resulting in increased efficiency in selected applications, power saving could be as high as 1 W average across the load.
