Power

650V MOSFET delivers high performance with a small footprint

13th May 2016
Nat Bowers
Datasheets

Expanding its CoolMOS family, Infineon Technologies has introduced the CoolMOS C7 Gold 650V in a TO-Leadless package. This combination of improved superjunction semiconductor process and advanced SMD package design is delivering unparallelled performance in hard switching applications. The small footprint of this package brings power density advantages for server, telecomms and solar applications.

The C7 Gold CoolMOS technology comes with 4-pin Kelvin Source capability and improved thermal properties of the TO-Leadless package. This enables a viable SMD solution for high current topologies such as PFC up to 3 kW. The increased C7 Gold performance leads to higher efficiency which is generating less switching losses and thereby less thermal losses. The C7 Gold technology has the world’s lowest R on*A and a small dimensions with only 115mm². This also brings power density with the lowest R DS(on) of 33mΩ achievable in such a small footprint.

Gold without lead

Compared to other traditional SMD packages such as D²PAK, the TO-Leadless package has a reduction of 30% for footprint, 50% for height and 60% for space. The package can also be connected either as a standard 3-pin MOSFET or using the 4-pin Kelvin Source concept. The implementation of this feature brings additional benefits in efficiency particularly at full load and makes it easier to use by also reducing ringing on the gate.

The high quality TO-Leadless package has a very low source inductance of 1nH, is lead-free and MSL1 compliant. It features easy visual solder inspection and is suitable for wave and reflow soldering. Compared to a Through Hole package, the TO-Leadless has more to it than higher power density: it can also help in realising cost savings in manufacturing due to the simple mounting process of SMD packages.

The CoolMOS C7 650V Gold TO-Leadless can be ordered now.

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