650V IGBTs increase power conversion efficiency

14th July 2015
Barney Scott

STMicroelectronics' M-series of 650V IGBTs offers designers a fast and affordable way to increase the efficiency of HVAC motor drives, Uninterruptible Power Supplies, solar power converters, and all power-conversion applications working up to 20kHz in hard-switching circuit topologies.

Built using ST's third generation of trench-gate field-stop low-loss technology, the M-series IGBTs feature a new trench gate and a specially designed P-N-P vertical structure that together deliver the best trade-off between conduction and switch-off losses and significantly improve the overall performance of the devices. A short-circuit withstand time of 6µs minimum at 150°C starting junction temperature, the extended maximum operating junction temperature of 175°C, and a wide Safe Operating Area (SOA) extend service lifetime and boost reliability in applications where high power dissipation is required.

Furthermore, the devices are available in packages that include a new generation of free-wheeling diodes optimissed for fast recovery whilst maintaining a low forward drop and a high level of softness. This provides excellent EMI protection while reducing switch-on losses. The positive VCE(sat) temperature coefficient, together with tight parameter distribution, enables the devices to be safely paralleled for even higher power requirements.

Complementing ST's HB series of 650V IGBTs for higher-frequency industrial applications (up to 60kHz), the M series units are available in 10 and 30A current ratings in a selection of power packages including the TO-220, D2PAK, and TO-247 LL long-lead. All devices are in full production, with pricing starting at $1.00 for the 10A STGP10M65DF2 in a TO-220 package for orders of 1000 pieces.

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