60V MOSFET increases power density and efficiency

This dual MOSFET provides RS-S(ON) down to 10mΩ typical at 10V, the lowest among 60V devices in the 3mm by 3mm footprint.

This value also represents a 42.5% improvement over the next best solution in this footprint size and is 89% lower than Vishay's previous-generation devices.

The result is reduced voltage drops across the power path and minimized power losses for increased efficiency.

For higher power density, the SiSF20DN's R_S1S2(ON) times area is 46.6% lower than the next best alternative MOSFET, even when including larger 6mm by 5mm solutions.

To save PCB space, reduce component counts, and simplify designs, the device uses an optimised package construction with two monolithically integrated TrenchFET Gen IV n channel MOSFETs in a common drain configuration.

The SiSF20DN's source contacts are placed side by side, with enlarged connections increasing the contact area with the PCB and reducing resistivity further compared to conventional dual package types.

This design makes the MOSFET ideal for bidirectional switching in 24 V systems and industrial applications, including factory automation, power tools, drones, motor drives, white goods, robotics, security/surveillance, and smoke alarms.

The SiSF20DN is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the new MOSFET are available, with lead times of 30 weeks for larger orders.