Power

500V MOSFETs feature low RDS(on) of 190-380mΩ

23rd January 2015
Siobhan O'Gorman
0
Datasheets

Developed to assist customers in achieving higher performance/efficiency standards such as the 80 PLUS standards, 500V MOSFETs have been introduced by Vishay Intertechnology. The 11 devices expand the company’s 500V D series of high-voltage MOSFETs, which are optimised for operation in SMPS to 500W. 

Based on 2nd gen super junction technology, the 500V MOSFETs complement Vishay's existing 500V D series components, which are based on standard planar technology. The 12-20A devices feature low RDS(on) of 190 to 380mΩ and low gate charge of 22 to 45nC. These features increase power density and efficiency in typical hard-switched topologies such as PFC, two-switch forward converters and flyback converters.

Designed to withstand high energy pulse in the avalanche and commutation modes, the RoHS-compliant MOSFETs are available now in both sample and production quantities.

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