30V Symmetric Dual MOSFETs in PowerPAIR 3x3FS package reports 98% efficiency

24th January 2023
Kristian McCann

Vishay Intertechnology have announced two new 30V symmetric dual n-channel power MOSFETs that combine high and low side TrenchFET Gen V MOSFETs in a single 3.3mm by 3.3mm PowerPAIR 3x3FS package. For power conversion in computing and telecom applications, the Vishay Siliconix SiZF5300DT and SiZF5302DT claim to increase efficiency while reducing component counts and simplifying designs.

The dual MOSFETs released today can be used in place of two discrete devices in the PowerPAK 1212 package — saving 50% board space — while offering a 63 % smaller footprint than dual MOSFETs in the PowerPAIR 6x5F, claim Vishay Intertechnology. The MOSFETs provide designers with space-saving solutions for synchronous buck converters, point of load conversion, and DC/DC modules in laptops with USB-C power delivery, servers, DC cooling fans, and telecom equipment. In these applications, the high and low side MOSFETs of the SiZF5302DT form an optimised combination for 50% duty cycles and best in class efficiency, in particular from 1A to 4A, while the SiZF5300DT provides an optimized combination for heavy loads in the 12A to 15A range.

The SiZF5300DT and SiZF5302DT leverage Vishay's 30V gen V technology for optimal on-resistance and gate charge. The SiZF5300DT provides typical on-resistance of 2.02mΩ at 10V and 2.93mΩ at 4.5V, while the SiZF5302DT features on-resistance of 2.7mΩ at 10V and 4.4mΩ at 4.5V. Typical gate charge for the MOSFETs at 4.5V is 9.5nC and 6.7nC, respectively. The resulting on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs used in power conversion applications — is 35% lower than that of previous-generation solutions with similar on-resistance. For high frequency switching applications, the result is a 2% increase in efficiency, allowing for efficiency of 98% at 100W.

Comparison to Previous-Generation Solution

Specification / device number

SiZF5302DT (Gen V)

Previous solution (Gen IV)

SiZF5302DT vs. previous solution comparison


PowerPAIR 3x3FS

PowerPAIR 6x5F

63 %





RDS(ON) typ. @ 4.5 V (mΩ)

  1. 4.4 (Channel 2)
  2. 1.2 (Channel 2)


Qg @ 4.5 V (nC)

  1. 6.7 (Channel 2)

11 (Channel 1) 46 (Channel 2)


FOM (mΩ*nC)

29 (Channel 1) 29 (Channel 2)

44 (Channel 1) 54 (Channel 2)

35 % 46 %

Efficiency @ 20 VIN / 12.5 VOUT / 800 kHZ / 100 W

98 %

96 %

2 %

The devices' flip-chip technology enhances thermal dissipation, while their pin configuration enables a simplified PCB layout and supports shortened switching loops to minimise parasitic inductance. The SiZF5300DT and SiZF5302DT are 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free.

Device Specification Table:

Part number







+16 / -12

+16 / -12

RDS(on) typ. (mΩ) @

10 V


Qg (Typ.) @ 4.5 V (nC)


ID (A) @

TA = 25 °C



TA = 70 °C




Featured products

Product Spotlight

Upcoming Events

View all events
Latest global electronics news
© Copyright 2023 Electronic Specifier