As satellite platforms require higher voltage buses to support growing power demands and advanced solar array technologies, the EPC7030MSH addresses a critical need for efficient, compact, and robust front-end power conversion.
With the lowest RDS(on) and gate charge in its class, the EPC7030MSH delivers the highest power current rating among all 300V rad-hard GaN FETs currently on the market. This makes it ideal for front-end DC/DC converters that must operate under stringent thermal and radiation constraints.
“The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers,” said Bel Lazar, CEO of EPC Space.
Key features:
- Rated for 300 V operation at LET = 63 MeV, and 250 V at LET = 84.6 MeV
- Lowest RDS(on) and QG of any 300V rad-hard GaN FET
- Highest current rating in its voltage class
- FSMD-M hermetic surface-mount package optimized for conduction cooling and increased creepage distance
- Compatible with existing GaN gate drivers
Target applications:
- Front-end DC/DC converters in satellite power systems
- Power conversion for higher voltage distribution buses
- Electric propulsion platforms requiring compact, high-performance switching
The EPC7030MSH is part of EPC Space’s ongoing mission to deliver space-grade Radiation Hardened GaN solutions that outperform silicon Radiation Hardened MOSFETs in efficiency, size, and thermal management – enabling more capable, reliable, and scalable satellite systems.
For 500-unit quantities engineering models are priced at $236, and Rad Hard space qualified are priced at $349.
