300V rad-hard GaN FET for higher voltage satellite power systems

As satellite platforms require higher voltage buses to support growing power demands and advanced solar array technologies, the EPC7030MSH addresses a critical need for efficient, compact, and robust front-end power conversion.

With the lowest RDS(on) and gate charge in its class, the EPC7030MSH delivers the highest power current rating among all 300V rad-hard GaN FETs currently on the market. This makes it ideal for front-end DC/DC converters that must operate under stringent thermal and radiation constraints.

“The EPC7030MSH 300V RH GaN FET delivers high current and rad-hard reliability, meeting the rigorous demands of higher-voltage space power architectures and simplifying thermal design for our customers,” said Bel Lazar, CEO of EPC Space.

Key features:

• Rated for 300 V operation at LET = 63 MeV, and 250 V at LET = 84.6 MeV
• Lowest RDS(on) and QG of any 300V rad-hard GaN FET
• Highest current rating in its voltage class
• FSMD-M hermetic surface-mount package optimized for conduction cooling and increased creepage distance
• Compatible with existing GaN gate drivers

Target applications:

• Front-end DC/DC converters in satellite power systems
• Power conversion for higher voltage distribution buses
• Electric propulsion platforms requiring compact, high-performance switching

The EPC7030MSH is part of EPC Space’s ongoing mission to deliver space-grade Radiation Hardened GaN solutions that outperform silicon Radiation Hardened MOSFETs in efficiency, size, and thermal management – enabling more capable, reliable, and scalable satellite systems.

For 500-unit quantities engineering models are priced at $236, and Rad Hard space qualified are priced at $349.