The new 25V chipset combines IR’s latest generation HEXFET® MOSFET silicon and benchmark DirectFET packaging technology to deliver a high density, single control and single synchronous MOSFET solution in the footprint of an SO-8, and with slim 0.7 mm profile. The new IRF6710S2, IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase.
The IRF6710S2 is ideally suited as a control MOSFET due to the device’s very low gate resistance of 0.3 Ohms and very low Miller charge (Qgd) of 3.0 nC which significantly reduces switching losses.
The IRF6795M and IRF6797M feature extremely low RDS(on) to significantly reduce conduction losses while the integrated Schottky reduces diode conduction losses and reverse recovery losses making these devices well suited for high current synchronous MOSFET circuits. The IRF6795M and IRF6797M have a common MX footprint to allow easy migration from existing SyncFET devices.
