An internal charge pump generates needed gate drive voltages. A low-power sleep mode is provided which shuts down internal circuitry to achieve very low quiescent current draw. This sleep mode can be set using a dedicated nSLEEP pin.
Internal protection functions are provided: undervoltage lockout, overcurrent protection, short-tosupply protection, short-to-ground protection, overtemperature warning, and overtemperature shutdown.
Overcurrent (including short-to-ground and short-to-supply) and overtemperature fault conditions are indicated via an nFAULT pin. The DRV8801-Q1 is packaged in a 16-pin QFN package with exposed thermal pad, providing enhanced thermal dissipation.
Features
• Qualified for Automotive Applications
• AEC-Q100 Qualified With The Following Results:
– Device Temperature Grade 1: TA = –40ºC to
125ºC
– Device HBM ESD Classification Level H2
– Device CDM ESD Classification Level C4
• Low RDS(on) Outputs (0.83Ω HS + LS Typical)
• Low-Power Sleep Mode
• 100% PWM Supported
• 8–38V Operating Supply Voltage Range
• Thermally Enhanced Surface Mount Package
• Configurable Overcurrent Limit
• Protection Features
– VBB Undervoltage Lockout (UVLO)
– Overcurrent Protection (OCP)
– Short-to-supply Protection
– Short-to-ground Protection
– Overtemperature Warning (OTW)
– Overtemperature Shutdown (OTS)
– Overcurrent and Overtemperature Fault
Conditions Indicated on Pins (nFAULT)
Discover more here.