Power

1,700V SiC MOSFET is optimised for industrial applications

8th July 2016
Nat Bowers

 

ROHM has announced a new 1,700V SiC MOSFET optimised for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters.

In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and manufacturing equipment. In the majority of auxiliary power supplies, which are used to provide drive voltages for power supply circuits, control ICs and various supplementary systems, high breakdown (1,000V+) silicon MOSFETs are normally utilised. However, these high-voltage MOSFETs suffer from large conduction loss (often leading to excessive heat generation), and present problems related to mounting area and the number of external components, making it difficult to reduce system size. In response, ROHM developed low-loss SiC MOSFETs and control ICs that maximise performance while contributing to end-product miniaturisation.

The SCT2H12NZ provides the high breakdown voltage required for auxiliary power supplies in industrial equipment. Conduction loss is reduced by eight times over conventional silicon MOSFETs, contributing to greater energy efficiency. And combining with ROHM’s AC/DC converter control IC designed specifically for SiC MOSFET drive (BD7682FJ-LB) will make it possible to maximise performance and improve efficiency by up to 6%. This allows smaller peripheral components to be used, leading to increased miniaturisation.

The SCT2H12NZ is available now.

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