High current rectifier diodes feature increased power rating

These devices use bonded die technology and improved package design, to give a significant improvement in power density over older designs within the same package footprint, as well as better electromechanical and thermal performance. With the silicon die directly bonded to a metallic disc, the 83mm die devices are constructed using a new improved process when compared to IXYS’ earlier high current rectifier diode designs.

This structure offers both improved transient thermal conditions and overall greater robustness when compared to designs with free floating silicon. The thermal capacity of the metal disc and its direct fusion to the silicon enhances performance and presents excellent transient thermal and surge current ratings

“The new package design allows for the maximum silicon to package ratio and represents up to a 25% increase in current density over older designs in a similar package outline,” commented Frank Wakeman, Marketing and Technical Support Manager, IXYS UK.

The 1.5kV device has an average current rating of 9830A (case temperature 55°C) and a surge rating of 80,000A, the 4kV device has an average current rating of 5984A (case temperature 55°C) and a surge rating of 68,000A and the 4.8kV part has an average current rating of 5139A (case temperature 55°C) and a surge rating of 60,500A.

The devices are available in industry standard 26mm and 35mm thick packages with an electrode diameter of 75mm and overall diameter of 112mm. Designations are: W9830TJ150, W5984TJ400 and W5139TJ480 for the 26mm thick package;  W9830TE150, W5984TE400 and W5139TE480 for the 35mm thick package. Typical applications include traction rectifiers and substations, front end rectification for very large drives, chemical power supplies and all rectifier applications requiring devices in this power rating.