The devices released today are optimized for encoder wheels, position sensors, infrared detectors for high brightness or daylight suppression, and rain sensors in automotive applications, as well as light curtains and barriers in garage door openers and electronic turnstiles.
The photodiodes offer a 12-microamp light current and spectral sensitivity range of 750 nm to 1050 nm, while the phototransistors offer a light current of 6 mA and spectral sensitivity range of 790 nm to 970 nm. The VEMD20x0X01 and VEMT20x0X01 devices feature a 1-nA dark current, +/- 15 deg. angle of half sensitivity, and have a matching emitter in the recently introduced high-intensity, high-speed VSMB20x0X01.
While most photo detectors must be mounted within 72 hours of being unsealed or removed from protective packing, the VEMD20x0X01 and VEMT20x0X01 devices can remain on the plant floor for up to four weeks, thanks to their moisture sensitivity level (MSL) of 2a, per J-STD-020. The lead (Pb)-free and halogen-free photo detectors support lead-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, and are compatible with lead-free reflow solder assembly.