Photodiodes provide 9.5µA high reverse light current

11th September 2014
Nat Bowers

Targeting photo detection in applications such as light curtains, light barriers, metering systems, switches and rain and sun sensors, Vishay has announced two automotive-grade high-speed silicon PIN photodiodes. The VEMD6010X01 and VEMD6110X01 provide a high reverse light current of 9.5µA (three times that of previously released devices, according to Vishay) and a very low dark current of 1nA.

The AEC-Q101-qualified devices operate over a temperature range from -40 to +110°C and feature fast response times and ±60° angles of half intensity. Supplied in clear- and black-epoxy 1206 surface-mount packages measuring 4x2x1.05mm, the photodiodes provide a sensitive area of 0.85mm2.

Suited for the detection of visible and near infrared radiation, the VEMD6010X01 is a clear epoxy device with a wide sensitivity range of 450-1100nm and 900nm wavelengths of peak sensitivity. Featuring a daylight blocking filter matched with 830-950nm IR emitters, the VEMD6110X01 is a black epoxy photodiode for 750-1050nm infrared applications.

The RoHS-compliant and halogen-free photodiodes support lead (Pb)-free processing and provide a moisture sensitivity level of 4, in accordance with J-STD-020, for a floor life of 72 hours. Samples and production quantities are available now with lead times of 10 weeks for large orders.

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