Home Products Optoelectronics Optocouplers protect & drive SiC & GaN power devices

Optocouplers protect & drive SiC & GaN power devices

Avago has announced two sets of high speed gate drive optocoupler devices, the ACPL-P/W347 and ACPL-P/W349. These devices are 1.0A and 2.5A gate drive optocouplers designed to protect and drive fast switching next-gen power semiconductors like SiC and GaN MOSFETs and IGBTs in applications such as power inverters, motor drives, and switching power supplies.

Optoelectronics

12 February 2015

byNews Desk

Compared to Avago’s previous generation devices, the ACPL-P/W347 and ACPL-P/W349 support wider gate operating voltage up to 30V, enabling higher voltage drive for high power applications.

The devices feature a 110ns maximum propagation delay, an operating VCC range of 15-30V and a rail-to-rail output voltage. Maximum peak output currents for the devices are 2.5A (ACPL-P/W349) and 1.0A (ACPL-P/W347). Under-voltage lockout with hysteresis is featured, as is a minimum high common mode rejection of 50kV/μs. The compact SO6 package minimises PCB space and reduces cost.

The devices are safety-approved to the following CSA, UL and IEC standards: IEC/EN/DIN EN 60747-5-5: VIORM = 891 VPEAK (ACPL-P347/349), VIORM = 1,140 VPEAK (ACPL-W347/349), as well as UL1577: VISO = 3,750 VRMS (ACPL-P347/349), VISO = 5,000 VRMS (ACPL-W347/349).

“As SiC and GaN MOSFETs gain market adoption and expand into higher power industrial applications, higher performance gate drive optocoupler devices like the Avago ACPL-P/W347 and ACPL-P/W349 complement these fast switching power semiconductors in delivering maximum power conversion efficiency,” said Kheng-Jam Lee, Marketing Director, Isolation Products Division, Avago.