The TLP187 combines a long-life gallium aluminium arsenide (GaAlAs) infrared light-emitting diode (LED) optically coupled to a Darlington transistor to provide high noise immunity and high insulation. The device can be operated over a wide temperature range of -55°C to 110°C.
Housed in an ultra-miniature S06 package, TLP187 has minimum creepage distance and clearance distance of min. 5mm, the internal isolation thickness is > 0.4mm and the max. package height is just 2.3mm. The TLP187 has a collector current (DC)IC of 150 mA and high collector-emitter breakdown voltage of 300V(BR)CEO.
TLP187 supports reflow mounting in accordance with JEDEC standards and meets the requirements of the international safety standards like UL, cUL, and VDE.