New detector group facility and APD arrays

3rd February 2021

Alex Lynn

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LASER COMPONENTS Detector Group has recently completed a move into a new purpose built 29,000-sq-ft facility in Chandler, Arizona, featuring purpose-built cleanrooms and workstations to optimise efficiency and cleanliness.

The company has an experienced R&D team working on a range of detectors including silicon and InGaAs avalanche photodiodes (APDs) and arrays, InGaAs photodiodes as well as PbS and PbSe detectors.

The company has been developing semiconductor detectors in Arizona since 2004 and can offer a comprehensive range of detectors to suit most requirements. The APDs are used in applications ranging from Time-of-Flight (TOF) sensors for distance measurement, to single photon detectors used in cutting edge quantum physics experiments.

LASER COMPONENTS has a range of standard monolithic silicon APD arrays with 8, 12 or 16 elements and minimal (40µm) gap between each element. However, most of the arrays are manufactured according to specific customer requirements and we welcome new custom requests.

Other APDs in the range include:

SAE series: silicon epitaxial structure enables fast response time and low noise.
SAR series: silicon reach-through structure with deep absorption region and very low noise.
SUR series: silicon epitaxial structure with surface optimised for UV short wavelengths.
SAP series: optimised for single photon counting in Geiger mode.
SAHA series: silicon, mass production, low cost, low operating voltage.
IAG series: InGaAs APD designed for NIR 1000nm-1630nm wavelengths, high gain (M>30), low noise.