lnP epitaxial crystal technology for processing applications

The Marktech R&D efforts were carried out under the direction of Dr Gako Araki, a 25-year expert in ultra-high-speed InP HBT and HEMT epitaxial crystal growth technologies. A member of the Marktech team since 2010, Araki’s experience further includes a progressive series of related R&D tenures at the New Energy and Industrial Technology Development Organization (NEDO) and NTT Advance Technology Corporation, both in Tokyo, Japan.

Research was carried out in two distinct phases. Phase One consisted of ultra-high-speed (5G) lnP epitaxial crystal growth technology development using small prototype MOCVD equipment (four by four inches). Phase Two consisted of actual ultra-high-speed (5G) lnP epitaxial crystal manufacturing using large mass-production MOCVD equipment, known as GAKOUS (four by ten inch).

Given that true lnP-HBT epitaxial crystal performance testing requires electrical characteristic evaluations on larger HBT devices, Marktech instead focused R&D efforts on the development of new manufacturing equipment which could produce InP-HBT epitaxial crystals with the necessary uniform quality, size and quality for large-capacity ultra-high-speed (5G) signal processing applications. These goals were successfully achieved via a new crystal manufacturing method: carbon-doped InGaAs growth without hydrogen.

The Marktech evaluation of the small MOCVD prototype derived from this equipment showed favourable performance characteristics. Marktech then performed successful high-frequency HBT electrical characterisations on the prototype with equally favourable results.

As a result, Marktech was able to conclude its successful development of new lnP HBT epitaxial crystal growth production equipment, known as MOCVD GAKOUS, whose capabilities offer the necessary prototype growth technology reproducibility and uniformity for manufacturing quality control in ultra-high-speed (5G) lnP epitaxial crystal growth applications.

As a final accompaniment to this R&D, Marktech developed a series of non-destructive electron mobility measurement systems. This included time-resolve photoluminescence testing with infrared wavelength area measurements, a technique which proved useful in the performance of lnGaAs channel layer quality checks, as well as HBT gain estimates by p-lnGaAs base layers during crystal growth and production.

Using these techniques, it was determined that the Marktech small MOCVD prototype four by four inch exhibited satisfactory performance with new organic materials, independent source injection and a narrow gap placed between the injector and surface to avoid complex surface reactions. As a result, Marktech developed its new MOCVD GAKOUS equipment to produce lnP epitaxial crystals which could offer the same performance and reliability as that of the prototype, yet with sufficient quality and uniformity for larger-scale commercial lnP HBT and HEMT crystal production volumes.

Of this research, Marktech CEO, Mark Campito, noted: “Marktech is proud of the R&D work of Dr. Araki in the area of InP epitaxial crystal mass production technologies for ultra-high-speed (5G) large-capacity signal processing. Our team’s commitment to proactive R&D efforts that address diverse or emerging market sector needs has been well-demonstrated over the years, whether that’s a 5G application, LiDAR, wearables, or others. We look forward to working in partnership with key 5G industry players to help them achieve their device performance goals.”