IQE announces 200mm RGB epitaxy for microLED display

MicroLEDs based upon GaN and gallium arsenide (GaAs) semiconductors are a disruptive new display technology that is being designed into multiple new platforms such as wearables, AR/VR headsets and large format displays.

IQE’s GaN and GaAs epitaxy is critical in enabling faster adoption of microLEDs. This is because IQE’s leading technology, high-volume manufacturing platforms and resulting scale provide customers with a commercial advantage. 

The launch of IQE’s differentiated microLED wafer products will provide its customers with faster-time-to-market options for display-level qualification. With multi-wavelength solutions available at wafer diameters including new options at 200mm (8”), IQE is delivering qualified foundry capacity from its multi-continent operations, which is a significant point of difference as it provides customers with epitaxy supply chain diversification.

By scaling the technology roadmap from 200mm (8”) to 300mm (12”), IQE will provide the industry with a cost-effective solution.