Optoelectronics

Two New Power Amplifiers Deliver Output Power to 2 Watts

9th August 2011
ES Admin

Hittite Microwave Corporation announces the release of two new Wideband GaAs pHEMT MMIC Distributed Power Amplifier die which are ideal for military EW, test & measurement equipment, and telecom applications as high as 32 GHz.

The HMC994 is a 0.5 Watt GaAs pHEMT MMIC Amplifier which operates from DC to 32 GHz. This wideband distributed amplifier provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while consuming only 250 mA of quiescent current from a +10 V supply. Gain flatness for the HMC994 is excellent at ±0.6 dB across the band, while a slightly positive gain slope from 5 to 25 GHz makes this amplifier ideal for military EW & ECM, and wideband test and measurement equipment applications.

Also released is the HMC998 2 Watt GaAs PHEMT MMIC Power Amplifier. The HMC998 is rated from 100 MHz to 22 GHz, and features 12 dB of gain, +41 dBm output IP3 and +31 dBm of output power at 1 dB gain compression. This powerful distributed amplifier also delivers up to +34 dBm of saturated output power while requiring only 500 mA of quiescent current from a +15V supply. Gain flatness for the HMC998 is excellent at ±0.7 dB from 1 to 22 GHz, and designers will appreciate its positive gain slope characteristic from 2 to 16 GHz.

Both the HMC994 and the HMC998 are offered in bare die form and feature RF I/Os which are internally matched to 50 Ohms. Requiring only a few external bias decoupling components, the HMC994 and HMC998 wideband distributed amplifiers were developed for simplified integration into multi-chip-modules (MCMs) and other higher level assemblies and subsystems. The HMC994 and the HMC998 complement Hittite's broad line of distributed low noise, driver, and power amplifiers, with frequency coverage up to 65 GHz.

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