Optoelectronics
Fairchild Semiconductor Delivers High Conversion Efficiency for Smartphone Backlighting Applications
As the mobile handset market continues to grow and smartphone usage and market growth become significantly more prevalent, designers are challenged to add functionality while reducing the form factor and components in the overall design. Responding to customer needs and these trends, Fairchild Semiconductor developed the FDZ3N513ZT – an N-Channel and Schottky diode combination in a small 1mm x 1mm footprint.
The This solution features low switching losses due to the precise optimization of dynamic characteristics, resulting in high conversion efficiency and longer battery life in cell phone applications.
The FDZ3N513ZT incorporates a 30V integrated N-Channel MOSFET and Schottky diode, featuring exceptionally low typical input capacitance (45pF) and total gate charge (1nC) to improve efficiency in boost converter designs.
The FDZ3N513ZT is housed in a 1mm x 1 mm WL-CSP package and saves 60 percent of board space when compared to devices in 1.6mm x 1.6mm packaging.
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APV1111GVY
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Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
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