Combining high radiant intensity and optical power with fast switching times, the VSMY14940 and VSMB14940 are available in compact 3.2 mm x 2.51 mm x 1.2 mm clear SMD side-view packages.
The VSMY14940 and VSMB14940 are based on GaAIAs surface emitter and multi quantum well technologies, respectively. With extremely high radiant intensity to 82 mW/sr at a 70 mA drive current, the VSMY14940 offers fast switching times of 10 ns and forward voltage of 1.48 V. Featuring a radiant intensity of 35 mW/sr, switching times of 15 ns and low forward voltage of 1.33 V, the VSMB14940 is suited for applications requiring lower intensity.
Ensuring a shelf life of 168 hours, the VSMY14940 and VSMB14940 high-speed infrared emitting diodes are RoHS-compliant, Vishay Green, halogen-free and lead (Pb)-free. Capable of lead-free soldering up to 260 °C, the devices provide a moisture sensitivity level of 3 in accordance with J-STD-020.
|
Part # |
VSMY14940 |
VSMB14940 |
|
Technology |
GaAIAs, surface emitter |
GaAIAs, MQW |
|
Radiant intensity (mW/sr) |
82 |
85 |
|
Radiant power (mW) |
40 |
28 |
|
Forward voltage (V) |
||
|
Switching time (ns) |
10 |
15 |
Samples and production quantities of the new infrared emitting diodes are available now, with leads times of 6 to 8 weeks for larger orders.