VVA delivers 1,000 times better linearity than GaAs

IDT’s VVAs deliver analog control for applications that require precise attenuation. Both devices come in a compact 3x3mm, 16-pin TQFN package. Their low insertion loss reduces RF chain path loss, while their high linearity improves system data rates.

These devices match popular footprints and are suited for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communication/data equipment, test/ATE equipment, military systems, JTRS radios and HF, VHF and UHF radios.

By using silicon-based RF semiconductor technology, IDT’s attenuators offer a robust alternative to older GaAs-based semiconductor technology. Silicon technology offers the advantages of improved RF performance as well as more robust ESD protections, better moisture sensitivity levels, improved thermal performance, lower current consumption and the proven reliability of silicon technology.

Comparing the F2258 to its pin-compatible GaAs competitor, the device has an Input IP3 of up to 65 vs 35dBm, a maximum attenuation slope of 33 vs. 53dB/Volt; minimum return loss up to 6000MHz, 12.5 vs. 7dB; and a maximum operating temperature range of 105 vs. 85°C. The F2255 device supports a frequency range down to 1MHz and has a maximum attenuation slope of 33dB/Volt. Both devices have bi-directional RF ports, support a single positive supply voltage of either 3 or 5V and have an operating temperature range from -40 to +105°C.

Chris Stephens, General Manager,  RF division, IDT, commented: “IDT’s silicon-based RF products deliver exceptional performance compared to GaAs solutions, in this case up to a 30dB linearity improvement. These devices are the lowest insertion loss VVAs on the market and have the most linear attenuation control characteristic.”