The PE43502, PE43503 and PE43602 DSAs offer best-in-class linearity, outstanding attenuation accuracy and low Insertion Loss (IL). As with all UltraCMOS silicon-on-sapphire RFICs, there is no gate lag nor phase drift and the devices have exceptionally fast settling time, making them ideal for wireless broadband access applications such as TDE, WiMAX and TD-SCDMA (China’s 3G standard for mobile telecommunication), and for next-generation communication systems such as cellular base stations, repeaters, femtocells and power amplifier distortion cancelling loops.
These new 50-Ohm DSAs have an operating frequency range of near DC up to 6 GHz with exceptional low-frequency performance, Input IP3 of +58 dBm, superior noise immunity and outstanding ESD tolerance of 500V HBM. They work with two typical supply voltages of 3.3V or 5V with very low power consumption, allowing the use of a single devices in both the RF and IF radio sections to save board space.