In addition to its GPT65Z1SHD, 100V, 140mA GaN JFET, the company has added two 650V GaN FETs, the GPT6505XMA and GPT650YME.
The normally on and normally off GaN FETs can be used as primary switches in high switching battery chargers, power adapters, LED lighting power supplies, wireless power devices, AC/DC or DC/DC converters and class D amplifiers.
The GPT65C0YME 650V drain source GaN FET has 230mΩ RDS(on) and 6A continuous drain. It has a low gate charge of 16nC to reduce switching losses and in order to operate with high switching frequencies. It is available in a surface mount DFN8080 package, with dimensions of 8.0 x 8.0mm. The GPT65O5XMA, has 1Ω typical RDS(on) and is supplied in a compact DFN5060 (5.0 x 6.0mm) surface mount package. It has a low gate charge of 7.5nC
MGT is a Taiwanese manufacturer which produces the wafer and also processes and packages its devices. According to managing director, Josepth Hung (pictured) it is the first Taiwanese company to offer all three stages. The company is not targeting mass markets but niche areas, like EVs, automotive and renewables, he added.
The company has a London office and its portfolio, which also includes SiC MOSFETs, MOSFET relays, TVS arrays and diodes, capacitors, magnetics and EMC products, resistors and current sensing devices, as well as wafers are available from a range of distributors including Kaga FEI Europe, Gateway, Microdis and Chip 1 Exchange.
MGT at PCIM – Hall 6-407
