World's first 48-layer 3D stacked cell flash memory
Toshiba has announced the development of the world’s first 48-layer 3D stacked cell structure flash memory, called BiCS, a 2-bit-per-cell 128Gb (16GB) device. The BiCS is based on a leading-edge 48-layer stacking process, which enhances the reliability of write / erase endurance and boosts write speed, and is suited for use in diverse applications, primarily SSD.
Since making the world’s first announcement of technology for 3D Flash memory, Toshiba has continued development towards optimising mass production. To meet further market growth in 2016 and beyond, Toshiba is proactively promoting the migration to 3D Flash memory by rolling out a product portfolio that emphasises large capacity applications, such as SSD.
The company is also readying for mass production in the new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 is now under construction and will be completed in the first half of 2016, to meet growing demand for flash memory.
Sample shipments of products using the new process technology start today.
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