Memory

Ramtrom's FM22LD16 FBGA package option for 4-megabit parallel nonvolatile F-RAM memory

21st January 2009
ES Admin
Ramtron has announced the availability of its 4-megabit (Mb) F-RAM memory in a streamlined FBGA package. The FM22LD16 is a 4Mb, 3-volt, parallel nonvolatile RAM in a 48-pin ball grid array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM22LD16 targets industrial control systems such as robotics, network and data storage applications, multi-function printers, auto navigation systems and a host of other SRAM-based system designs. Ramtron’s 4Mb parallel F-RAM is also available in a 44-pin thin small outline plastic (TSOP) package.
“The FM22LD16 allows system designers to fit four times the F-RAM density into the same footprint,” explains Ramtron Marketing Manager, Duncan Bennett. “Manufacturers of RAID controllers and industrial PCs with limited board area will find the new 4Mb FBGA package option very appealing. With no need for a battery and a new smaller memory footprint, the 4Mb F-RAM is the most space efficient nonvolatile RAM on the market.”

The FM22LD16 is organized as a 256K x 16 nonvolatile memory, accessed with an industry standard parallel interface. Access time is 55ns and cycle time is 110ns. The device reads and writes at bus speed for NoDelay™ writes with endurance of at least 1E14 (100-trillion) writes and 10-year data retention.

This 4Mb FRAM is a drop-in replacement for standard asynchronous SRAMs, but far superior as it does not require a battery for data backup and is inherently more reliable due to its monolithic form. The FM22LD16 is a true surface-mount solution, requiring no rework steps for battery attachment and, unlike battery-backed SRAM, is highly resistant to moisture, shock and vibration.

With a convenient interface to current high-performance microprocessors, the FM22LD16 features a high-speed page mode that enables 4-byte burst read/write operations at up to 40MHz, a bus speed significantly higher than other nonvolatile memory. The device boasts a lower operating current than similar density nonvolatile memories, drawing 8 milliamps for reads/writes and a standby current of 90 microamps. It operates from 2.7 to 3.6 volts over the industrial temperature range (- 40°C à +85°C).

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