Memory

Low-voltage SDRAMS boost battery life

16th December 2020
Mick Elliott

Alliance Memory has added to its offering of high-speed CMOS mobile low-power SDRAMs with new LPDDR4 devices featuring on-chip ECC.

For improved performance with higher power efficiency than previous-generation LPDDR3 SDRAMs, the 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN offer lower power consumption and faster speeds in the 200-ball FBGA package.

With low-voltage operation of 1.1V/1.8V, the devices increase battery life in portable electronics for the consumer and industrial markets, including tablets, wearables, handheld gaming consoles, personal navigation systems, and more.

Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the LPDDR4 SDRAMs deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps.

For automotive applications — including infotainment and ADAS systems — the AEC-Q100 qualified devices operate over a temperature range of -40°C to +105°C.

The LPDDR4 SDRAMs are organized as 1 channel (AS4C128M16MD4-062BAN and AS4C256M16MD4-062BAN) and 2 channels (AS4C128M32MD4-062BAN and AS4C256M32MD4-062BAN) per device, with individual channels consisting of eight banks of 16 bits.

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