Memory

Low-power SRAM IP targets wearable & IoT applications

4th June 2015
Siobhan O'Gorman

An embedded SRAM IP that targets applications demanding long battery life with minimal operating and stand-by power performance has been released by sureCore. Supporting a wide operating voltage range of 0.7-1.2V, the single port SRAM boasts dynamic power savings exceeding 50% of current commercial offerings. The IP also cuts static power by up to 35% with a 10% area penalty.

Embedded memory has become increasingly prevalent in modern SoC designs to support multiple processors running numerous software applications. Historically, however, SRAM has proven extremely power hungry. sureCore's SRAM dramatically cuts both dynamic and static power through its patented suite of advanced circuit design techniques.

The SRAM IP technology is particularly suitable for developers of wearable electronics and IoT applications, where extending battery life is crucial. The IP also provides considerable value in the networking space where power and heat dissipation are critical considerations.

sureCore's 28nm, ultra-low power, FDSOI SRAM IP is the first product on a roadmap that includes the introduction of a 40nm, bulk CMOS, low-power SRAM later this year. A 28nm, bulk CMOS solution is also in development.

"As the semiconductor industry addresses wearbale and IoT applications, the key challenges to the creation of both innovative and commercially competitive products are going to be power consumption, heat dissipation and battery life. sureCore is dedicated to minimising both dynamic and static power to help bring the promise of these technologies to fruition," said Paul Wells, CEO, sureCore.

"Because of migration costs, there is still considerable innovation happening at relatively mature production nodes," said Guillaume d'Eyssautier, Chairman, sureCore. "These nodes are predicted to have extended longevity and strategically we felt it important to provide solutions for them, so this is where we have focused our road map."

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