Infineon extends radiation-hardened memory portfolio

18th June 2024
Paige West

Infineon has announced the availability of the industry’s first radiation-hardened (rad hard) 1 and 2Mb parallel interface ferroelectric RAM (F-RAM) nonvolatile memory devices.

These new additions to Infineon’s memory portfolio offer reliability and endurance, with up to 120 years of data retention at 85°C, along with random access and full memory write at bus speeds.

Infineon F-RAM devices are intrinsically radiation-hardened, making the technology ideal for the evolving mission requirements of space-based applications that have traditionally relied on slower, less rugged EEPROM nonvolatile storage devices. Compared to alternatives, these F-RAM devices offer faster random memory access, enhanced data security with instant non-volatile write technology, and low power consumption, featuring programming voltage as low as 2V and a maximum operating current of 20mA.

“As more space applications are architected to process data on-system, and not on-ground via telemetry, there is increasing demand for high-reliability non-volatile memory to work in tandem with space-grade processors and FPGAs for data-logging applications,” said Helmut Puchner, Vice President, Fellow Aerospace and Defence, Infineon Technologies. “Infineon introduced the first SPI F-RAM devices for this market in 2022, and the addition of parallel interface devices reflects our commitment to delivering best-in-class, highly reliable and flexible solutions for next-generation space requirements.”

Infineon’s radiation-hardened (rad hard) F-RAM devices are suited for a range of demanding applications, including data storage for sensors and instruments, data logging for calibration data, secure key storage for data encryption, and boot code storage. Besides space applications, they are also suitable for avionics and other uses requiring military-standard temperature grades (-55 to 125°C).

Similar to the SPI version, the new Infineon parallel interface F-RAM devices boast qualitynon-volatile memory features due to their unique chemical composition. This allows for instantaneous switching of atomic states, as opposed to trapped charges used in EEPROM technologies. F-RAM is inherently immune to soft errors and the effects of magnetic fields or radiation. The technology eliminates the need for software management of page boundaries and offers near-infinite endurance (10^13 write cycles), removing the necessity for wear leveling.

The parallel interface F-RAM devices are available in 44-lead ceramic TSOP packages and are QML-V qualified, offering superior radiation performance:

  • TID: >150 Krad (Si)
  • SEL: >96 MeV·cm²/mg @115°C
  • SEU: Immune
  • SEFI: <1.34 * 10^-4 err/ (active/standby) / Immune (sleep mode)


The complete portfolio of rad hard F-RAM non-volatile memories, including 2Mb SPI and 1 and 2 Mb parallel devices, is available now.

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