High speed CMOS DDR2 SDRAM features high 2Gb density

25th June 2015
Barney Scott

Alliance Memory has broadened its lineup of high-speed CMOS DDR2 SDRAMs with a device featuring high 2Gb density in the 84-ball 8x12.5x1.2mm FBGA package. Available from a very limited number of suppliers, the AS4C128M16D2 is offered in commercial (0 to +85°C) and industrial (-40 to +95°C) temperature ranges.

Hard to find until now, the AS4C128M16D2 provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions in automotive, industrial, consumer, networking, and medical products requiring high memory bandwidth. The device is internally configured as eight banks of 16M x 16 bits. The DDR2 SDRAM offers a synchronous interface, operates from a single + 1.8V (± 0.1V) power supply, and is RoHS-compliant. 

The AS4C128M16D2 features a fast clock rate of 400MHz and a data rate of 800Mb/s/pin. The DDR2 SDRAM provides programmable read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximise performance.

With the addition of the AS4C128M16D2, Alliance Memory now offers an extensive lineup of DDR2 SDRAMs featuring densities of 512Mb, 1 and 2Gb. 

Samples of the AS4C128M16D2 are available now, with lead times of six to eight weeks for production quantities.

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