Memory

Embedded flash memory devices boost 5G applications

25th February 2020
Alex Lynn

KIOXIA Europe (formerly Toshiba Memory Europe) has announced that it has started sampling Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices.

Well suited for mobile applications including 5G networks requiring high-performance with low power consumption, the new line-up utilises KIOXIA’s cutting-edge BiCS FLASH 3D flash memory and is supported in four capacities: 128GB, 256GB, 512GB, and 1TB.

The new devices integrate BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5mm x 13.0mm package. The controller performs error correction, wear levelling, logical-to-physical address translation, and bad-block management for simplified system development.

The newest offerings enable next-gen mobile devices to take full advantage of the connectivity benefits of 5G, leading to faster download and reduced lag time. As a result mobile customers benefit from the improved user experience of their mobile device.

“KIOXIA stays at the forefront of UFS memory development,” said Axel Störmann Vice President for Memory Marketing & Engineering, KIOXIA Europe. “With UFS, first introduced by us in 2013 and UFS ver. 3.0 last year the presentation of UFS 3.1. today, highlights KIOXIA’s dedication to advancement and innovation further.”

WriteBooster: Enables faster write speeds by approximately two to three times than the normal write performance.

Sequential Read performance: Improved by approximately 30% over KIOXIA’S existing Ver. 3.0 product.

Host Performance Booster (HPB) Ver. 1.0 (defined as an extension spec): Improves random read performance by utilising the host side memory.

UFS-DeepSleep Power Mode: Achieves power consumption reduction in sleep mode compared to the existing UFS-Sleep Power Mode.

Performance Throttling Event Notification: The UFS may throttle performance if the internal temperature reaches its upper limit, to avoid overheating and damage to the internal device circuits.

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