DRAM modules boost maximum clock speed
Rutronik is stocking the current generation of ATP DRAM modules, the DDR4. The data transfer rate of up to 3200 MT/s ensures an increase in the possible maximum clock speed.
The supply voltage is 1.2 V.
High performance with lower power consumption thus allows the application in the high-performant areas of telecommunication infrastructures, network storage systems, network-attached storage (NAS) servers, micro/cloud servers and embedded systems such as industrial PCs.
The modules of the previous DDR3 series combine a data transfer rate of up to 1866 MT/s and supply voltages of 1.5 V and 1.35 V to achieve fast performance with higher energy savings.
An application-compliant coating film layer protects sensitive electronic circuits and modules from dust, moisture, corrosion, chemicals and extreme temperatures.
Anti-sulphur resistors ward off the harmful effects of sulphur contamination.
A 30 μ" thick gold finger coating and a printed circuit board consisting of 6-10 layers of PCB assemblies (PCBA) ensures better signal quality as well as mechanical reliability and durability of the modules.
To ensure long-term stability, availability and consistent performance in industrial applications, optional features include the ability to withstand extreme temperatures from -40°C to 95°C.
These DRAM modules for enterprise and industrial applications are typically installed in high-performance environments such as data centres and hard-to-reach locations.
Here, uninterrupted data processing is essential, as any downtime results in significant economic losses.