CMOS DDR SDRAMs for high-performance PC applications
Extending its 64M and 128M lines of high-speed CMOS synchronous DRAMs, Alliance Memory has today introduced a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package. The AS4C2M32S-7TCN and AS4C4M32S-7TCN provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth.
For these high memory bandwidth industrial, telecom, and consumer applications, the AS4C2M32S-7TCN and AS4C4M32S-7TCN feature fast access time from clock down to 5.4 ns and fast clock rates to 166 MHz.
Opperating from single +3.3-V (± 0.3 V) power supply, the new SDRAMs are lead (Pb)- and halogen-free and operate over a commercial temperature range of 0 °C to 70 °C. With a burst termination option, the new AS4C2M32S-7TCN and AS4C4M32S-7TCN provide programmable read or write burst lengths of 1, 2, 4, 8, or full page.
A programmable mode register allows the system to choose the most suitable modes to maximize performance, with easy-to-use refresh functions including auto- or self-refresh. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence.
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Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Cost: | $3.95 |
