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Alliance Memory Introduces New High-Speed CMOS Synchronous DRAMs With 128-Mb and 256-Mb Densities in 54-Ball TFBGA Package

9th April 2013

Alliance Memory, Inc.

ES Admin

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Alliance Memory today extended its 128M and 256M lines of high-speed CMOS synchronous DRAMs with new devices in a 54-ball 8 mm by 8 mm by 1.2 mm TFBGA package. These 8M x 16 and 16M x 16 SDRAMs feature fast access time from clock down to 4.5 ns at a 5-ns clock and clock rates of 143 MHz.

The devices released today are optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. The SDRAMs operate from a single +3.3-V (± 0.3 V) power supply and are lead (Pb)- and halogen-free.

The AS4C8M16S-7BCN and AS4C16M16S-7BCN provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Alliance Memory's legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a
number of similar solutions. The AS4C8M16S-7BCN and AS4C16M16S-7BCN are the latest in the company's full line of high-speed SDRAMs, which includes devices with densities of 16 Mb, 64 Mb, 128 Mb, 256 Mb, and 512 Mb in the 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball BGA packages.

Samples and production quantities of the new SDRAMs are available now, with lead times of six weeks for large orders.