4-megabit non-volatile FRAM memory is industry first says Ramtron

15th March 2007
ES Admin
Ramtron has launched what it says is the first 4-megabit (Mb) FRAM memory – the highest-density FRAM product, with quadruple the FRAM memory capacity available to date. The FM22L16 is a 4Mb, 3-volt, parallel non-volatile RAM in a 44-pin thin small outline plastic (TSOP) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM22L16 targets industrial control systems such as robotics, network and data storage applications, multi-function printers, auto navigation systems and a host of other SRAM-based system designs.
“The 4Mb FRAM breaks new technological ground that will carry Ramtron and FRAM into new and innovative applications,” explains Ramtron Vice President Mike Alwais. “The FM22L16 moves FRAM technology onto a mainstream and proven process node from Texas Instruments (TI) that offers many new stand-alone and integrated product opportunities. This introduction positions FRAM as an ideal non-volatile memory solution with potential to alter the memory landscape.”

The FM22L16 is organised as a 256K by 16 non-volatile memory, accessed with an industry standard parallel interface. Access time is 55 nanoseconds and cycle time is 110 nanoseconds. The device reads and writes at bus speed for NoDelay™ writes with endurance of at least 1e14 (100-trillion) writes and 10-year data retention.

This 4Mb FRAM is a drop-in replacement for standard asynchronous SRAMs, but far superior as it does not require a battery for data backup and is inherently more reliable due to its monolithic form. The FM22L16 is a true surface-mount solution, requiring no rework steps for battery attachment and, unlike SRAM, is highly resistant to moisture, shock and vibration.

With a convenient interface to current high-performance microprocessors, the FM22L16 features a high-speed page mode that enables 4-byte burst read/write operations at up to 40MHz, a bus speed significantly higher than conventional RAM. The device boasts a lower operating current than standard SRAMs, drawing 18 milliamps for reads/writes and an ultra low current sleep mode of 5 microamps. It operates from 2.7volts to 3.6 volts over the industrial temperature range of -40 degrees C to +85 degrees C. Visit for more product details.

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