“The 4Mb FRAM breaks new technological ground that will carry Ramtron and FRAM into new and innovative applications,” explains Ramtron Vice President Mike Alwais. “The FM22L16 moves FRAM technology onto a mainstream and proven process node from Texas Instruments (TI) that offers many new stand-alone and integrated product opportunities. This introduction positions FRAM as an ideal non-volatile memory solution with potential to alter the memory landscape.”
The FM22L16 is organised as a 256K by 16 non-volatile memory, accessed with an industry standard parallel interface. Access time is 55 nanoseconds and cycle time is 110 nanoseconds. The device reads and writes at bus speed for NoDelay™ writes with endurance of at least 1e14 (100-trillion) writes and 10-year data retention.
This 4Mb FRAM is a drop-in replacement for standard asynchronous SRAMs, but far superior as it does not require a battery for data backup and is inherently more reliable due to its monolithic form. The FM22L16 is a true surface-mount solution, requiring no rework steps for battery attachment and, unlike SRAM, is highly resistant to moisture, shock and vibration.
With a convenient interface to current high-performance microprocessors, the FM22L16 features a high-speed page mode that enables 4-byte burst read/write operations at up to 40MHz, a bus speed significantly higher than conventional RAM. The device boasts a lower operating current than standard SRAMs, drawing 18 milliamps for reads/writes and an ultra low current sleep mode of 5 microamps. It operates from 2.7volts to 3.6 volts over the industrial temperature range of -40 degrees C to +85 degrees C. Visit www.ramtron.com/4MbFRAM/Default.asp for more product details.