Switch handles 100W of continuous wave power from 100MHz to 1GHz

Microsemi’s MPS2R10-606 switch provides frequency coverage from 100MHz to 1GHz with 0.2dB insertion loss, 15dB return loss and 55dB of isolation at mid-band. A simple analogue control voltage allows the device to achieve 500nS switching speeds while handling up to 100W of Continuous Wave (CW) power. Available in a compact, nonmagnetic 2.03x1.27mm format, the MPS2R10-606 switch meets RoHS requirements per EU directive 2002/95/EC and is fully compatible with pick and place and Surface-Mount Technology (SMT) solder reflow manufacturing techniques.

“Our MRI and communication radio customers are requiring an increased level of functional integration coupled with form factor reduction, which is consequently driving the need for PIN diode switches with higher density, functionality and performance,” said Vincent Cannistraro, Senior Director and Business Unit Manager, Microsemi’s RF/Microwave Discrete Products business unit. “Our new PIN diode switch technology in a compact MMSM package format is a key enabler here, and permits designs to be implemented at significantly higher power levels compared with traditional Gallium-Arsenide (GaAs), metal-semiconductor field-effect transistor and silicon-on-SOI solutions.”

In addition, the MPS2R10-606’s technology supports public safety, aviation, marine, and military handheld and rack mount radio hardware (JTRS), which are critical in combating multiple international and domestic threats. As Microsemi’s PIN diode MMSM switches are nonmagnetic, they offer the high density and performance required for the implementation of MRI receive arrays.

According to a recent survey by Strategy Analytics, the land-based military radio market alone will approach $6.5bn in 2024. Microsemi’s MPS2R10-606 switch is suitable for this growing market, as it combines compact size, fast switching and high CW power handling capability.

Microsemi continues to develop premier PIN diode products and currently offers a comprehensive line of RF and microwave GaAs and silicon PIN diodes, which range from ultralow junction capacitance (Cj) beam lead PIN diodes capable of switching up to 40GHz, to high power PIN diodes designed to handle 60dBm CW power. Designed for low intermodulation switching and attenuation, these PIN diode products cover a wide variety of applications including mobile and fixed communications systems, radar systems to Ka-band frequencies, wideband Electronic Warfare (EW) systems, test instrumentation, MRI systems, cellular base stations, Software-Defined Radios (SDRs), T/R switch control and duplexers. Microsemi’s PIN diodes are available in die, flip chip, beam-lead, stripline, glass axial, plastic, ceramic, low magnetic, hermetic, wafer-scale and surface-mount options.

Key features of the MPS2R10-606 include:

• 100W CW power handling capability
• Low insertion loss: 0.2dB
• High isolation: 55dB
• Low return loss: 15dB
• High switching speed: 500nS
• Stable low leakage passivation with rugged glass body