The new switch features high linearity, which remains invariant across the full supply range, as well as exceptional isolation and fast switching time. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports.
The PE42822 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.
The HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
According to Peregrine, additional key features of the PE42822 include:
- Single-event peak power handling: +46.1 dBm LTE
- Input IP3: +65 dBm
- Input IP2: +120 dBm
- Extended operating temperature: 105 °C
- 1.8V/3.3V TTL compatible control
- ESD performance: 3 kV HBM on RF pins to ground
- Packaging: 16-lead 3 mm x 3 mm x 0.85 mm QFN