RF transistors operate on the 2015 frequency bands

27th August 2014

Siobhan O'Gorman

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LDMOS RF power transistors, designed for wireless/cellular base stations, have been released by NXP Semiconductors. The Gen9 transistors are aimed at Doherty power amplifiers – symmetric and asymmetric – and have been claimed to show 5% more efficiency within these applications.

The transistors are optimised for frequencies of 3.4-3.8GHz, higher than the frequencies currently used by operators. NXP Semiconductors designed the Gen9 transistors in such a way as to enable designers to start developing devices in time for when these frequencies are released for use in 2015.

“Our Gen9 family of LDMOS transistors once again sets a new standard for performance, power and efficiency,” said Christophe Cugge, Director of Marketing, Base Station Power Amplifiers, NXP Semiconductors. “Building on our strong heritage in RF power, Gen9 delivers a competitive edge to our customers with truly future-proofed products. Wireless infrastructure manufacturers are under constant pressure to bring cost-effective and power-efficient base stations to market quickly. As well as meeting demand for popular frequency bands such as 1800, 2100 and 2700MHz, we’re giving manufacturers a head start by also optimising Gen9 for 3.4-3.8GHz, enabling them to design equipment in preparation for when these frequencies become more widely used.”