Frequency

RF power transistors suit radar pulsed applications

26th August 2014
Nat Bowers

Designed for civilian and military radar pulsed applications, M/A-COM Technology Solutions has introduced two GaN on SiC HEMT RF power transistors. The MAGX-000035-015000 and MAGX-000035-01500S transistors provide 17W peak output power (typical) with 15.5dB power gain and 63% efficiency.

Assembled using state of the art wafer fabrication processes, the RF power transistors provide high gain, efficiency, bandwidth and ruggedness over multiple octave bandwidths for today’s demanding application needs. The devices operate over a frequency range from DC to 3.5GHz and feature an MTTF of 600 years.

Paul Beasly, Product Manager, M/A-COM Technology Solutions, commented: "The 15W peak GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range. The device is an ideal driver stage for MACOM’s higher power GaN transistors for L-Band and S-Band pulsed radar applications.”

The MAGX-000035-015000 and MAGX-000035-01500S RF power transistors are offered in enhanced flanged (Cu/W) and flangeless (Cu) ceramic packages which provide excellent thermal performance.

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