Power amplifier operates from 8 to 12 GHz

8th August 2022
Mick Elliott

Availability and full design support capabilities for a new gallium nitride high-power amplifier from United Monolithic Semiconductors is announced by distributor Richardson RFPD.

The CHA8312-99F is a two-stage GaN HPA that operates from 8 to 12 GHz and provides 17 W output power, 50 percent power added efficiency, and 26 dB small signal gain.

The part is developed on a robust 0.15 µm gate length GaN on SiC HEMT process and is available as a bare die.

Ideal for defence applications, the amplifier is also suitable for a wide range of microwave applications and systems such as radar, test equipment and communication.

Additional key features include:

  • @ +23 dBm input power
  • Input return loss: >17 dB
  • Output return loss: >11 dB
  • DC bias: 20 V @ 320 mA
  • Chip size: 3.99 mm x 3.12 mm x 0.07 mm

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