The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit providing an excellent bare die solution for high power X-band applications.
The MAAP-015035 is a three stage 8.5-11.5GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41dBm and a small signal gain of 36dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip provides 40% power added efficiency and offers very high gain which eliminates the need for a driver amplifier in customers’ circuits.
Paul Beasly, Product Manager, M/A-COM Technology Solutions, commented: “The combination of high power, high gain and excellent power added efficiency performance, makes these two power amplifiers very attractive solutions for high power X-band applications. Furthermore, the versatile biasing options and wide-band operation make the devices ideal for a wide range of X-band applications such as marine, weather and surface-movement radar, as well as perimeter security and communication links.”
Samples of both the MAAP-015030 and MAAP-015035 are available from stock.