IXYS Colorado Introduces the IXRFD630 and IXRFD631 High Power RF Drivers

This driver succeeds the DEIC420 and DEIC421 and represents the next generation of RF driver for 13.56 and 27.12 Mhz RF power.



Packaged in our surface mount DE Series RF package to minimize stray lead inductance, the IXRFD630 and IXRFD631 offer optimum switching performance.



The IXRFD630 and IXRFD631 is a CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD630 can source and sink 30A of peak current while producing voltage rise and fall times of less than 4ns and minimum pulse widths of 8ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD630 unmatched in performance and value.



“We are excited to be able to offer the next generation driver for power RF applications. The IXRFD630 and IXRFD631 offer an excellent combination of power, size and performance,” commented Stephen Krausse, General Manager of IXYS Colorado.



The IXRFD630 and IXRFD631 are ideal for applications such as:



-Driving RF MOSFETs

-Class D and E RF Generators

-Multi-MHz Switch Mode Power Supplies

-Pulse Transformer Driver

-Pulsed Laser Diode Driver

-Pulse Generator



IXRFD630 Features:



-High Peak Output Current

-Low Output Impedance

-Low Quiescent Supply Current

-Low Propagation Delay

-High Capacitive Load Drive Capability

-Wide Operating Voltage Range



Added features for the IXRFD631



-Kelvin connections reduce false triggering caused by ground bounce

-Additional on-board capacitance stabilizes the supply rail



While the IXRFD631 replicates the performance of the IXRFD630, additional improvement in performance stems from a Kelvin ground connection on the input side that allows use of a common mode choke substantially reducing false triggering caused by ground bounce. Along with the Kelvin ground pin, additional bypass capacitance has been added on the substrate to further stabilize the supply rails while providing better decoupling at the die. The IXRFD631 can source and sink 30 A of peak current while producing voltage rise and fall times of less than 4 ns and minimum pulse widths of 8 ns. The input of the driver is compatible with +5V or CMOS with a fixed threshold level.