For both devices, the RF ports are internally DC blocked and matched to 50 ohms, enabling simple system integration.
Ideally suited for pulsed applications, the new GaN power amplifiers offer superior power,
PAE and gain performance that can save costs on existing platforms while enabling the development of future systems.
The TGA2622-SM typically generates 35W of saturated output power with a power-added efficiency greater than 42% and 27.5 dB of large signal gain.
The TGA2624-SM typically generates 20W of saturated output power with a power-added efficiency greater than 40% and 25 dB of large signal gain.