EuMW 2015: GaN power amplifier replaces TWTs
A 1kW X-band GaN pulsed power amplifier, the DM-X1K0-01, developed by Diamond Microwave Dvices was introduced at European Microwave Week in Paris. The devices is designed as an alternative to vacuum tube amplifiers. Special emphasis has been given to the size and weight of the amplifier which make it suitable for radar applications including airborne radar where these considerations come into play.
Maximum weight is 3000g excluding heatsink.
The amplifier has a 1.2GHz bandwidth and offers pulse widths uop to 100 microseconds with duty cycles up to 20 per cent. It is a modfular products based on Diamond Microwave’s 100W variant, and oit can be provided with either co-axial or waveguide outputs. The standard design has an N—type output connector.
Using GaN devices and manufactured with chip and wire technology the product offers state of the art power performance coupled with an excellent power to volume ratio.
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Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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