##IMAGE_1_R##Applications of the rugged BGX710x series are in wireless infrastructure base stations, and repeaters for standards such as GSM, W-CDMA, TD-SCDMA and LTE, as well as in point-to-point systems. The main difference between the two NXP IQ modulators is in output power: 0 dBm for BGX7100HN, and 4 dBm for BGX7101HN, providing solutions for infrastructure cell sizes ranging from small to macro. Next to the high dynamic range and low noise floor, the devices excel in monotonic IP3o behavior versus frequency, in the lowest unadjusted carrier feedthrough (-50 dBm at -7 dBm output power @ 1960 MHz) and in the highest unadjusted sideband suppression in the market (45 dBc at-7 dBm output power @ 1960 MHz). The devices’ wide temperature range (-40° to 85°C) makes them well-suited for operation under extreme weather conditions.
A unique feature of the BGX710x series is the fast on/off switching that enables the device to go from power-saving mode to full-spec operation and stable RF performance within 1 microsecond, even for the most demanding Time Division Duplex systems. This results in power consumption savings of more than 50 percent.
“Tomorrow’s wireless infrastructure systems need technology that enables high RF performance, while still being cost-effective and low-power. Customers who have tested our modulators confirm that the dynamic range and linearity results are superb. The devices’ insensitivity to input common mode voltage has enabled savings on our customers’ bill of materials. Moreover, the fast on/off switching capability of less than 1 microsecond makes our modulators the preferred choice for TTD systems,” said Robbert van der Waal, director of marketing, NXP Semiconductors. These IQ modulators are great examples of how NXP can free RF designs of performance barriers and help our customers meet the most demanding system requirements.
Availability
BGX7100HN and BGX7101HN are available now. Products are on display at European Microwave Week in Amsterdam.
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