700W L-Band RF power transistor reduces part counts

24th March 2014
Nat Bowers

Lowering part counts to reduce system cost, improve reliability and maintain high ruggedness, a 700W L-Band RF power transistor has been introduced by Infineon Technologies. The company has claimed that the PTVA127002EV features the industry's highest L-Band output power (700W) available for radar systems operating in the 1200-1400MHz frequency range.

Radar systems emit a high-powered electronic pulse within a specific frequency range and detect the return echoes of each pulse to form an image of distant objects. In this demanding application, the transistors used in the power supply of these pulsed systems must be highly efficient and capable of driving a stable signal in all operating conditions.

Infineon’s power transistor, PTVA127002EV, is well-suited for L-Band radar systems used in air traffic control and weather observation applications. High efficiency corresponds with low heat output, and high ruggedness (ability to withstand 10:1 VSWR load mismatch) further contributes to the advantages of low component count made possible by the 700W output.

Based on the company’s 50V LDMOS power transistor technology, the PTVA127002EV exhibits excellent efficiency; typically 55% across the 1200-1400MHz band, with a P1dB output power of 700W, 16dB gain and low thermal resistance characteristics when measured with a 300µS 10% duty cycle pulse.

With this addition, Infineon now offers a family of RF power transistors for 1200-1400MHz system applications with rated power output of 25, 50, 350 and 700W. In addition to ruggedness, common specifications for each device include wide gate source voltage range (from -6 to +12V), and integrated electrostatic discharge protection.

Engineering samples and an evaluation board are available now.

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