500W RF transistor optimised for radar and avionics

4th February 2014
Staff Reporter

Designed for L-Band pulsed radar applications, the MAGX-000912-500L00 from M/A-COM is a GaN on SiC HEMT Power Transistor. The gold-metalized transistor has been optimised for pulsed avionics and radar applications.

Operating between 960MHz and 1215MHz, the transistor delivers 500W of output power with 19.8 dB of gain and 60% efficiency. Allowing for reliable and stable operation at more extreme load mismatch conditions, the device boasts very high breakdown voltages and a MTTF of 600 years. The transistor is suitable for broadband Avionics applications in the 960-1215 MHz range such as Traffic Collision Avoidance Systems (TCAS), Distance Measuring Equipment (DME) and Datalinks.

“The 500 W transistor offers excellent efficiency and ruggedness by using 50 V GaN technology in combination with MACOM’s world-class high power design and assembly techniques,” commented Paul Beasly, Product Manager. “The device is an ideal candidate for customers looking to upgrade Avionics systems which require increased functionality and flexibility without sacrificing power, efficiency or size”.

The MAGX-000912-500L00 is available in a flanged and flangeless packages. Samples are available now.


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