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Efficient Power Conversion Introduces Development Board Featuring 100 V Enhancement Mode Gallium Nitride FETs

12th April 2013

Efficient Power Conversion Corporation

ES Admin

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Efficient Power Conversion introduces the EPC9010 development board to make it easier for engineers to start designing with a 100 V enhancement-mode gallium nitride field effect transistor in applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

The EPC9010 development board is a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode (eGaN) field effect transistor. The purpose of this development board is to simplify the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9010 development board is 2” x 1.5” and contains not only two EPC2016 eGaN FET in a half bridge configuration using the LM5113 gate driver from Texas Instruments, as well as supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.