MMIC power amplifier targets 5-6GHz RF-based designs

Fabricated on Qorvo’s production 0.25 um gallium nitride-on-silicon carbide (GaN-on-SiC) process, this monolithic microwave integrated circuit (MIMC) power amplifier simplifies system integration and offers impressive performance in a compact 15.24 × 15.24 mm bolt-down package.

It features greater than 60W of saturated output power and over 21dB of large-signal gain.

The device’s power-added efficiency (PAE) is rated at greater than 47 percent, and the RF output power where the device starts to draw positive gate current (P_SAT) is measured at 48dBm.

Input return loss for the amplifier is specified at 14 to 23dB, while the output return loss is 13dB.

To simplify system integration, the QPA2308 also supplies two RF ports that are fully matched to 50 ohms, each integrated with DC blocking capacitors.

The QPA2308 has an operating temperature of minus 40 to 85 degrees Celsius, and a power dissipation of 140W (at 85 degrees Celsius).

RoHS compliant, it suits RF applications such as C-Band Radars, satellite (Satcom) and space communications, and electronic warfare technologies.

Mouser is also stocking the QPA2308EVB1 evaluation board.

Made from Rogers RO6035HTC dielectric, a high-reliability material used specifically in aerospace and defense-based projects due to its dielectric constant and low loss, the PCB on the evaluation board features .01in. thick, 0.5oz. copper on both sides.